Fluorine-based plasma treatment for AlGaN/GaN e-mode HEMTs and low on-voltage diodes
Résumé
The onset and pinch-off voltages shift of lateral GaN field-effect rectifier diodes (L-FER) and normally-off HEMTs are studied. It is shown that a short duration of low power SF6 plasma followed by a low temperature annealing permits to get an effective and stabilized fluorine ion implantation in the AlGaN barrier, contributing to reduce the back shift of both devices threshold voltages.
Domaines
Sciences de l'ingénieur [physics]
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Fluorine based plasma treatment for AlGaN GaN E-mode HEMTs and Low On-Voltage diodes.pdf (903 Ko)
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